Theoretical estimation of distorting effects by trr of parasitic MOSFET-Diode in DCI-NPC audio power amplifiers

One of the topologies that can work at high Power and high Quality simultaneously is the DCI-NPC topology. This new topology has new parts and presents new voltage and distortion errors. One of these new elements are the MOSFET parasitic Diodes. These Parasitic-Diodes presents a Recovery Reverse Time (trr) and its distorting effects generates signal and quality losses, and EMI problems. These phenomena are introduced, modeled, studied and evaluated to discuss the affectation importance of the Recovery Reverse Time value in the Multilevel Power Amplifiers performance.